AttoSwitch has received funding from the European Commmission (EC) under Grant Agreement N°101135571.
AttoSwitch: Dirac cold-source transistor technologies towards attojoule switching
AttoSwitch aims to develop a scalable Dirac transistor technology based on large-area integration of 2D and 3D Dirac materials, e.g. graphene and CoSi, and the realization of high-performance device demonstrators at technologically relevant length scales.
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