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AttoSwitch has received funding from the European Commmission (EC) under Grant Agreement N°101135571


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AttoSwitch: Dirac cold-source transistor technologies towards attojoule switching

AttoSwitch aims to develop a scalable Dirac transistor technology based on large-area integration of 2D and 3D Dirac materials, e.g. graphene and CoSi, and the realization of high-performance device demonstrators at technologically relevant length scales.

Title: Dirac cold-source transistor technologies towards attojoule switching - AttoSwitch
Project N°: 101135571
Term: 1.1.2024 - 30.06.2027
Funding: € 3.884.248,50 from the European Commission and €1.094.937 from SERI
Call: HORIZON-CL4-2023-DIGITAL-EMERGING-01-CNECT
Topic: HORIZON-CL4-2023-DIGITAL-EMERGING-01-11

 

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